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har dwar e documentation h a l l - e f f e c t s w i t c h i c f a m i l y hal ? 1xy edition april 8, 2009 dsh000150_001en data sheet free datasheet http:///
hal1xy data sheet 2 april 8, 2009; dsh000150_001en micronas copyright, warranty, and limitation of liability the information and data contained in this document are believed to be accurate and reliable. the software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of micronas. all rights not expressly granted remain reserved by micronas. micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. by this publication, micronas does not assume respon- sibility for patent infringements or other rights of third parties which may result from its use. commercial con- ditions, product availability and delivery are exclusively subject to the respective order confirmation. any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. all operating parameters must be validated for each customer application by customers? technical experts. any new issue of this document invalidates previous issues. micronas reserves the right to review this doc- ument and to make changes to the document?s content at any time without obligation to notify any person or entity of such revision or changes. for further advice please contact us directly. do not use our products in life-supporting systems, aviation, and aerospace applications! unless explicitly agreed to otherwise in writing between the parties, micronas? products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applica- tions intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. no part of this publication may be reproduced, photo- copied, stored on a retrieval system or transmitted without the express written consent of micronas. micronas trademarks ?hal micronas trademarks choppered offset compensation protected by micronas patents no. us5260614, us5406202, ep0525235 and ep0548391. third-party trademarks all other brand and product names or company names may be trademarks of their respective companies. free datasheet http:///
contents page section title micronas april 8, 2009; dsh000150_001en 3 data sheet hal1xy 4 1. introduction 4 1.1. family overview 5 1.2. marking code 5 1.3. operating junction temperature range 5 1.4. solderability and welding 6 2. specifications 6 2.1. outline dimensions 8 2.2. positions of sensitive areas 8 2.3. absolute maximum ratings 8 2.4. recommended operating conditions 9 2.5. characteristics 10 2.6. magnetic characteristics overview 11 3. application notes 11 3.1. ambient temperature 11 3.2. extended operating conditions 11 3.3. start-up behavior 11 3.4. emc and esd 12 4. data sheet history free datasheet http:///
hal1xy data sheet 4 april 8, 2009; dsh000150_001en micronas hall-effect switch ic family note: the hal1xy family has been designed for com- mercial and industrial applications. it is not intended to be used in automotive or automotive-like applications. 1. introduction the hal1xy hall switch family is produced in cmos technology. the sensors include a temperature-com- pensated hall plate with active offset compensation, a comparator, and an open-drain output transistor. the comparator compares the actual magnetic flux through the hall plate (hall voltage) with the fixed reference values (switching points). accordingly, the output tran- sistor is switched on or off. the active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. in addition, the magnetic characteristics are constant in the full supply voltage and temperature range. the hal1xy family is available in the smd-package sot89b-3 and in the leaded version to92ua-6. 1.1. family overview this sensor family consists of sensors with a latching and unipolar output behavior. unipolar sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. latching sensors: the sensors have a latching behavior and require a magnetic north and south pole for correct functioning. the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. type switching behavior sensitivity see page 101 unipolar low 10 102 latching high 10 103 latching medium 10 104 latching low 10 106 unipolar high 10 107 unipolar low 10 108 unipolar medium 10 109 unipolar high 10 free datasheet http:///
data sheet hal1xy micronas april 8, 2009; dsh000150_001en 5 1.2. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. 1.3. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). i : t j = ? 20 c to +125 c c: t j = 0 c to +85 c hall sensor package codes hall sensors are available in a wide variety of packag- ing versions and quantities. for more detailed informa- tion, please refer to the brochure: ?hall sensors. ordering codes, packaging, handling?. 1.4. solderability and welding soldering during soldering reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. welding device terminals shall be compatible with laser and electrical welding. please, note that the success of the welding process is subject to different welding parame- ters which will vary according to the welding technique used. a very close control of the welding parameters is absolutely necessary in order to reach satisfying results. micronas, therefore, does not give any implied or express warranty as to the ability to weld the com- ponent. fig. 1?1: pin configuration type temperature range i c HAL101 101 i 101c hal102 102 i 102c hal103 103 i 103c hal104 104 i 104c hal106 106 i 106c hal107 107 i 107c hal108 108 i 108c hal109 109 i 109c halxxxpa-t temperature range: i package: tq for sot89b-3 jq for to92ua-6 type: 1xy example: hal102jq- i type: 102 package: to92ua-6 temperature range: t j = ? 20 c to +125 c 1 v dd 2, 4 gnd 3 out free datasheet http:///
hal1xy data sheet 6 april 8, 2009; dsh000150_001en micronas 2. specifications 2.1. outline dimensions fig. 2?1: sot89b-3 : plastic s mall o utline t ransistor package, 4 leads, with one sensitive area weight approximately 0.034 g. free datasheet http:///
data sheet hal1xy micronas april 8, 2009; dsh000150_001en 7 fig. 2?2: to92ua-6 : plastic transistor standard ua package, 3 leads weight approximately 0.106 g free datasheet http:///
hal1xy data sheet 8 april 8, 2009; dsh000150_001en micronas 2.2. positions of sensitive areas 2.3. absolute maximum ratings stresses beyond those listed in the ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these conditions is not implied. exposure to absolute maximum rating conditions for extended periods will affect device reliability. this device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso- lute maximum-rated voltages to this high-impedance circuit. all voltages listed are referenced to ground (gnd). 2.4. recommended operating conditions functional operation of the device beyond those indicated in the ?recommended operating conditions/characteris- tics? is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. all voltages listed are referenced to ground (gnd). sot89b-3 to92ua-6 y 0.95 mm nominal 1.08 mm nominal a4 0.33 mm nominal 0.30 mm nominal symbol parameter pin name min. max. unit v dd supply voltage 1 ? 15 28 1) v v o output voltage 3 ? 0.3 28 1) v i o continuous output on current 3 ? 50 1) ma t j junction temperature range ? 40 140 2) c 1) as long as t j max is not exceeded 2) t < 1000 h symbol parameter pin name min. max. unit comment v dd supply voltage 1 3.8 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3024v free datasheet http:///
data sheet hal1xy micronas april 8, 2009; dsh000150_001en 9 2.5. characteristics at t j = ? 20 c to +125 c, v dd = 3.8 v to 24 v, gnd = 0 v at recommended operation conditions if not otherwise specified in the column ?conditions?. typical characteristics for t j = 25 c and v dd = 12 v. fig. 2?3: recommended footprint sot89b-3, dimensions in mm all dimensions are for reference only. the pad size may vary depending on the requirements of the soldering process. symbol parameter pin no. min. typ. max. unit conditions i dd supply current over temperature range 11.635.2ma v ddz overvoltage protection at supply 1 ? 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 ? 28 32 v i oh = 25 ma, t j = 25 c, t = 20 ms v ol output voltage over temperature range 3 ? 130 400 mv i ol = 20 ma i oh output leakage current over temperature range 3 ?? 10 a output switched off, t j 150 c, v oh = 3.8 to 24 v f osc internal oscillator chopper frequency over temperature range ?? 62 ? khz hal10y, hal11y ? 140 ? khz hal104 t en(o) enable time of output after setting of v dd 1 ? 35 ? s t r output rise time 3 ? 75 400 ns v dd = 12 v, r l = 820 ohm, c l = 20 pf t f output fall time 3 ? 50 400 ns sot89b package r thja r thjc thermal resistance junction to ambient junction to case ? ? ? ? ? ? 212 73 k/w k/w measured with a 1s0p board 30 mm x 10 mm x 1.5 mm, pad size (see fig. 2?3) to92ua package r thja r thjc thermal resistance junction to ambient junction to case ? ? ? ? ? ? 225 63 k/w k/w measured with a 1s0p board 1) v dd = 12 v, b > b on + 2 mt or b < b off ? 2 mt 1.05 1.05 1.80 0.50 1.50 1.45 2.90 free datasheet http:///
hal1xy data sheet 10 april 8, 2009; dsh000150_001en micronas 2.6. magnetic characteristics overview at t j = ? 20 c to +125 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v. magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. HAL101 ? 20 c 28 33 42 18 23 30 ? 10.0 ? mt unipolar 25 c 28 34 42 18 24 30 ? 10.0 ? mt 125 c 26 32 42 17.5 22 30 ? 10.0 ? mt hal102 ? 20 c 0.5 2.8 6.5 ? 6.5 ? 2.8 ? 0.5 ? 5.6 ? mt latching 25 c 0.5 2.6 6 ? 6 ? 2.6 ? 0.5 ? 5.2 ? mt 125 c 0.1 2.4 5.5 ? 5.5 ? 2.4 ? 0.1 ? 4.8 ? mt hal103 ? 20 c 5.5 8.4 12.5 ? 12.5 ? 8.6 ? 5.5 ? 17 ? mt latching 25 c 5 7.6 11.5 ? 11.5 ? 7.6 ? 5 ? 15.2 ? mt 125 c 3.5 6.7 11.0 ? 11.0 ? 6.4 ? 3.5 ? 13.1 ? mt hal104 ? 20 c 10.5 15.8 21.5 ? 21.5 ? 15.8 ? 10.5 ? 31.6 ? mt latching 25 c101418.5 ? 18.5 ? 14 ? 10 ? 28 ? mt 125 c 6.0 10 15.5 ? 15.5 ? 10 ? 6.0 ? 20 ? mt hal106 ? 20 c 8.8 12.5 18.0 4.5 7.0 11.0 ? 5.5 ? mt unipolar 25 c 8.1 12.0 16.5 4.2 6.5 10.4 ? 5.5 ? mt 125 c 7.4 10.0 16.0 3.4 6.0 9.9 ? 4.0 ? mt hal107 ? 20 c 19.6 27.5 35.8 16.9 23.0 31.3 ? 4.5 ? mt unipolar 25 c 19.6 26.5 35.0 16.9 22.5 30.6 ? 4.0 ? mt 125 c 18.4 26.0 33.6 15.8 22.0 29.4 ? 4.0 ? mt hal108 ? 20 c 13.1 17.5 25.0 11.9 15.7 23.0 ? 1.8 ? mt unipolar 25 c 12.7 17.0 23.8 11.4 15.0 21.9 ? 2.0 ? mt 125 c 10.8 14.6 23.0 9.7 13.0 21.0 ? 1.6 ? mt hal109 ? 20 c 2.3 8.1 12.0 1.8 5.9 11.5 ? 2.2 ? mt unipolar 25 c 2.3 7.9 12.0 1.8 5.7 11.5 ? 2.2 ? mt 125 c 2.3 7.7 12.0 1.8 5.7 11.5 ? 2.0 ? mt free datasheet http:///
data sheet hal1xy micronas april 8, 2009; dsh000150_001en 11 3. application notes 3.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). at static conditions and continuous operation, the fol- lowing equation applies: if i out > i dd , please contact micronas application sup- port for detailed instructions on calculating ambient temperature. for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: 3.2. extended operating conditions all sensors fulfill the electrical and magnetic character- istics when operated within the recommended oper- ating conditions (see page 8). supply voltage below 3.8 v typically, the sensors operate with supply voltages above 3 v, however, below 3.8 v some characteristics may be outside the specification. note: the functionality of the sensor below 3.8 v is not tested. for special test conditions, please contact micronas. 3.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in section 2.5.: characteristics on page 9. during the initialization time, the output state is not defined and the output can toggle. after t en(o) , the out- put will be low if the applied magnetic field b is above b on . the output will be high if b is below b off . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin . 3.4. emc and esd for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 3?1). the series resistor and the capacitor should be placed as closely as possible to the hal sensor. please contact micronas for the detailed investigation reports with the emc and esd results. fig. 3?1: test circuit for emc investigations t j t a t + = t i dd v dd r th = t amax t jmax t ? = r v 220 w v emc v p 4.7 nf v dd out gnd 1 2 3 r l 1.2 kw 20 pf free datasheet http:///
hal1xy data sheet 12 april 8, 2009; dsh000150_001en micronas micronas gmbh hans-bunte-strasse 19 ? d-79108 freiburg ? p.o. box 840 ? d-79008 freiburg, germany tel. +49-761-517-0 ? fax +49-761-517-2174 ? e-mail: docservice@micronas.com ? internet: www.micronas.com 4. data sheet history 1. data sheet: ?hal1xy hall-effect switch ic family?, april 8, 2009, dsh000150_001en. first release of the data sheet. free datasheet http:///

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